Effects of Hydrogen on Endurance Characteristics in NAND Flash Memories

This study comprehensively investigates the effect of hydrogen content in forming gas annealing (FGA) on endurance NAND flash memories by statistically analyzing transconductance ( G m , a x ) characteristics. The degradation ${\rm{\Delta }}{G}_{m,max}$?> Δ worsened with higher cycling temperature, delayed time period from erasing to programming ${t}_{EP}$?> t E P operation, and word-line bias ${V}_{A}$?> V A during ${t}_{EP}.$?> . Moreover, these effects become more pronounced as FGA increases. Using measured distributions Monte -Carlo TCAD technology, activation energy ${E}_{A}$?> oxide damage creation can be extracted. extracted values were 50 meV 160 for diluted (4%) pure (100%) samples, respectively. suggests that a concentration results ionized atoms remaining layer. During ${t}_{EP},$?> ions drift near Si/SiO 2 surface, where they may react form trap states. is revealed have linear relationship respect ${V}_{A},$?> slope independent FGA.